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Growth of diamond thin films: a review
Kromka, Alexander ; Potocký, Štěpán ; Rezek, Bohuslav
Diamond is shown as an extraordinary material which offers promising solution for variety of fundamental studies and industrial uses. Here, growth of synthetic diamond films at low pressures (1 atm) and low temperatures (<1000°C) from carbon consisting gas mixtures is discussed. Variety of chemical vapor deposition techniques are reviewed, their advantages and disadvantages are pointed out too.
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Review of nanocrystalline diamond film deposition on silicon and glass substrates down to 400 °C
Potocký, Štěpán ; Babchenko, Oleg ; Ižák, Tibor ; Varga, Marián ; Kromka, Alexander ; Rezek, Bohuslav ; Michalka, M.
We present an overview of a nanocrystalline diamond (NCD) films deposition on silicon and glass substrates by microwave plasma CVD in hydrogen-based gas mixture. The temperature plays a crucial parameter as the diamond growth process is temperature controlled. Use of temperature sensitive substrates demanded reducing substrate temperature. Natural decrease of deposition rate resulted in search of new or nonstandard process parameters which could at least minimize or compensate it. Addition of oxygen containing gasses was found to improve film quality, and increasing deposition speed. Moreover improvement in pre-treatment of foreign substrates allowed deposition of fully closed films in less then 100 nm. Low thickness of NCD always favorable due to lattice mismatch between substrate material and NCD film. Successful adoption of NCD film deposition on silicon and glass allowed us to study surface chemical modification for protein attachment and DNA immobilization.
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